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Product Data Sheet Gain Block Amplifier TGA8320-SCC Key Features and Performance * * * * * * DC to 8 GHz Frequency Range (L, S, and C-band) 9.5 dB Gain 1.3:1 Input/Output SWR 17 dBm Output Power at 1 dB Gain Compression Typical Noise Figure is 5 dB 1.066 x 1.219 x 0.152 mm (0.042 x 0.048 x 0.006 in.) Description The TriQuint TGA8320-SCC is a general purpose gain block amplifier, which operates from DC to 8 GHz. Four 200 um FETs produce 9.5 dB nominal gain and a noise figure that is 5 dB across the band. Typical input and output return loss is 16 dB at midband. Nominal power output is 17 dBm at 1 dB gain compression. Ground is provided to the circuitry through vias to the backside metallization. The TGA8320-SCC gain block amplifier is suitable for a variety of military and commercial applications such as L, S, and C-band radar systems, ECM, and communication systems. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermocompression and thermosonic wire-bonding processes. The TGA8320-SCC is supplied in chip form and is readily assembled using automated equipment. TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 1 Product Data Sheet TGS8320-SCC TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 2 Product Data Sheet TGS8320-SCC TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 3 Product Data Sheet TGS8320-SCC TYPICAL S-PARAMETERS Frequency (GHz) MAG S 11 ANG () MAG S 21 ANG () MAG S 12 ANG () MAG S 22 ANG () GAIN (dB) 0 .5 1 .0 1 .5 2 .0 2 .5 3 .0 3 .5 4 .0 4 .5 5 .0 5 .5 6 .0 6 .5 7 .0 7 .5 8 .0 0 .0 5 0 .0 6 0 .0 8 0 .1 0 0 .1 2 0 .1 3 0 .1 5 0 .1 6 0 .1 6 0 .1 6 0 .1 8 0 .1 8 0 .1 2 0 .0 9 0 .0 9 0 .1 3 - 79 - 113 - 132 - 146 - 159 - 171 - 180 173 168 166 166 149 148 164 - 164 - 150 3 .1 8 3 .1 1 3 .0 7 3 .0 3 2 .9 9 2 .9 6 2 .9 3 2 .9 1 2 .9 1 2 .8 9 2 .8 6 2 .8 3 2 .8 6 2 .8 3 2 .8 0 2 .7 3 166 155 144 133 122 112 101 90 79 68 57 47 36 24 12 0 0 .0 0 1 0 .0 0 1 0 .0 0 1 0 .0 0 2 0 .0 0 3 0 .0 0 3 0 .0 0 4 0 .0 0 7 0 .0 0 9 0 .0 1 2 0 .0 1 9 0 .0 1 8 0 .0 1 7 0 .0 1 8 0 .0 2 0 0 .0 2 2 111 109 127 129 135 133 149 145 143 135 131 107 105 104 101 95 0 .0 4 0 .0 7 0 .0 9 0 .1 1 0 .1 3 0 .1 4 0 .1 5 0 .1 6 0 .1 5 0 .1 5 0 .1 4 0. 13 0 .1 5 0 .1 7 0 .2 1 0 .2 6 52 59 59 55 50 43 37 26 12 -3 - 19 - 39 - 70 - 99 - 124 - 144 1 0 .1 9 .8 9 .7 9 .6 9 .5 9 .4 9 .3 9 .3 9 .3 9 .2 9 .1 9 .0 9 .1 9 .0 8 .9 8 .7 TA = 25oC, V+ = 12 V, VG2 = 1.5 V, I+ = 70 mA Reference planes for S-parameter data include bond wires as specified in the "Recommended Assembly Diagram". The S-parameters are also available on floppy disk and the world wide web. RF CHARACTERISTICS P ARAMETER TES T CONDITIONS TYP UNIT GP SWR(in ) Sm all- s ig n al p o wer g ain In p u t s t an d in g wave rat io f = DC t o 8 GHz f = DC t o 8 GHz f = DC t o 8 GHz f = DC t o 8 GHz f = DC t o 8 GHz f = 2 GHz f = 4 GHz f = 8 GHz f = 2 GHz f = 4 GHz fo = 2 GHz fo = 4 GHz fo = 2 GHz fo = 4 GHz 9 .5 1 .3 :1 1 .3 :1 17 5 30 31 28 33 39 - 2 3 .5 - 32 - 19 - 25 dB d Bm dB d Bm d Bm d Bc* d Bc* SWR(o u t ) Ou t p u t s t an d in g wave rat io P1 d B Ou t p u t p o wer at 1 -d B g ain co m p res s io n NF IP 3 IP 2 No is e fig u re Ou t p u t t h ird -o rd er in t ercep t p o in t Ou t p u t s eco n d -o rd er in t ercep t p o in t Ou t p u t t h ird h arm o n ic at 1 -d B g ain co m p res s io n Ou t p u t s eco n d h arm o n ic at 1 -d B g a in co m p res s io n V+ = 12 V, VG2 = 1.5 V, I+ = 70 mA, TA = 25oC *Unit dBc applies to decibels with respect to the carrier or fundamental frequency, fo. THERMAL INFORMATION P ARAMETER R JC Th erm al res is t an ce, ch an n el t o b ack s id e V = 1 2 V, V G2 = 1 .5 V, I = 7 0 m A + TES T CONDITION + NOM UNIT 27 C/ W TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 4 Product Data Sheet TGS8320-SCC TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 5 Product Data Sheet TGS8320-SCC Refer to TriQuint Gallium Arsenide Products Designers' Information on TriQuint's web site. TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 6 Product Data Sheet TGS8320-SCC GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 7 |
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